GROUP III NITRIDE ENHANCEMENT-MODE HEMT BASED ON COMPOSITE BARRIER LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A group III nitride-enhanced HEMT based on a composite potential barrier layer structure and a manufacturing method thereof. The HEMT comprises a first semiconductor and a second semiconductor acting respectively as a channel layer and a potential barrier layer, a third semiconductor acting as a p-type layer, a source, a drain, and a gate. A groove structure is formed on the potential barrier layer corresponding to a region of the gate. The groove structure cooperates with the third semiconductor and the gate to form a p-type gate, and the second semiconductor comprises a first structure layer and a second structure layer sequentially disposed on the first semiconductor. With regards to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer. The HEMT structure can be more precisely controlled and also has better device performance, such as significantly reduced forward gate leakage and improved gate threshold voltage amplitude. The uniformity of device threshold voltage in a chip is improved, and the HEMT is easier to fabricate and suitable for large-scale production.