Development of a new flip-chip bonding process using multi-stacked /spl mu/-Au bumps

摘要

A novel flip-chip bonding (FCB) process was developed for improving the packaging of high frequency ICs operating at more than 10 GHz. This process, which uses multi-stacked /spl mu/-Au bumps, a lower apparatus cost than that of the FCB process using PbSn bumps. Tests have confirmed that the new FCB process is sufficiently reliable and that ICs made with this process has satisfactory high-frequency characteristics in IC operation of up to 15 GHz.