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The application of scanning capacitance microscopy in device failure analysis doping profile determination

机译：扫描电容显微镜在器件故障分析中的应用掺杂分布确定

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In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 μm technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.

机译：在本文中，我们介绍了扫描电容显微镜（SCM）在0.11μm技术设备的故障分析中的应用。将SCM结果与化学染色数据进行比较，并说明化学染色的局限性。讨论了截面SCM成像以及SCM技术的优点和局限性。

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《IEE Colloquium on New Directions in VLSI Design, 1989 》|1989年|p.99-102|共4页
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Lau Y.M.; Lim V.S.W.; Ang L.B.; Trigg A.;
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中图分类自动化技术、计算机技术 ;
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1. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures [J] . S.-E. Park, N. V. Nguyen, J. J. Kopanski, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006 ,第1期

机译：扫描电容显微镜和开尔文探针显微镜在确定Si均匀结构的二维掺杂轮廓中的比较
2. A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices [J] . M. Leicht, G. Fritzera, B. Basnar Microelectronics & Reliability . 2001 ,第9a10期

机译：扫描电容显微镜分析的可靠过程适用于功率MOSFET器件的二维掺杂分布图
3. Applications of atomic force microscopy/scanning capacitance microscopy in imaging implant structures of semiconductor devices [J] . Kuo-Jen Chao, Jeffrey R.Kingsley, Robert J.plano Journal of Vacuum Science & Technology. B . 2001 ,第4期

机译：原子力显微镜/扫描电容显微镜在半导体器件注入结构成像中的应用
4. The application of scanning capacitance microscopy in device failure analysis doping profile determination [C] . Lau, Y.M., Lim, . 2004

机译：扫描电容显微镜在器件故障分析中的应用掺杂分布确定
5. Two-dimensional dopant profiling by scanning capacitance microscopy. [D] . McMurray, Jeffrey Steven. 2000

机译：通过扫描电容显微镜对二维掺杂物进行分析。
6. Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications [O] . Ting Su, Haifeng Zhang -1

机译：非易失性存储应用中的扫描探针显微镜技术对掺杂铜的氧化锌薄膜中的陷获电荷进行电学研究
7. Device failure analysis by scanning electron microscopy [O] . Davies I. G., Thornton P. R., Shaw D. A., 1968

机译：通过扫描电子显微镜分析设备故障
8. Applications of Scanning Electron Microscopy to Failure Analysis in Ceramics and Glasses [R] . Mecholsky, J. J., Healey, J. T. 1981

机译：扫描电子显微镜在陶瓷和玻璃失效分析中的应用

The application of scanning capacitance microscopy in device failure analysis doping profile determination

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