Two-dimensional profiling of doping profiles of a material sample by scanning probe microscopy

摘要

The invention relates to a method for scanning the capacitance as a function of the two-dimensional structure of a dielectric or partially dielectric material sample by means of the tip of a probe of a scanning microscope. The method provides for the change in capacitance to be measured and evaluated as current during the probe probe movement from one position on the material sample to the next position.