A Scanning Capacitance Microscope (SCM) has been built to measure two-dimensional (2D) dopant density profiles on semiconductor materials. A quasi-one-dimensional(1D) analytical model has been constructed for inverting the measured SCM data to dopant profile. Local Capacitance-Voltage (C-V) measurements have been performed on n;The calculation of the electrostatic force between a tip and semiconductor sample as a function of dopant density is also presented in this chapter. Finally, in the fourth chapter, the SCM measurement results are presented and the inverted 2D profiles are compared with the results obtained by other independent methods. A discussion about measurement sensitivity, spatial resolution, modeling errors, and future works is presented.;The dissertation presented here consists of four chapters. The first chapter introduces the dopant profile measurement and gives a review of existing doping profiling methods. The advantages of SCM for dopant profile measurement are discussed in this chapter. The second chapter concentrates on the instrumentation of SCM, SCM tip preparation, and silicon sample preparation for dopant profile measurement by SCM. The third chapter describes the tip/sample modeling by which the measured capacitance signal is inverted to dopant profile.
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