Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications

摘要

Lateral GaN-based p-n junction gated field effect transistor (LJFET) devices have been demonstrated on 200mm engineered substrates. The maximum current density was 200 mA/mm and threshold voltage was -30V. Large gate width devices (40mm) exhibited 800 mA current. The devices have blocking capability exceeding 1.1 kV.