Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

摘要

We report on the fabrication and characterization of Au-free Ti/Al/TiN-based ohmic contacts on 200 mm AlGaN/GaN epilayers for power devices. Materials and processing used are fully compatible for integration of GaN-based devices in a Si platform. Contact resistance values as low as 0.62 Ωmm were measured for an optimum alloy temperature as low as 550 ℃.