Investigation of strain-profile and optoelectronic properties of In(Ga)As/GaAs Trilayer QDIP

摘要

Infrared photodetectors with strain-coupled quantum dot structure have better optoelectronic properties compared to the conventional uncoupled structure. In this report, the strain profile and optoelectronic properties have been compared between the strain coupled Trilayer InAs and InGaAs quantum dot infrared photodetectors. The device with InGaAs QDs in its active layer, has longer luminescence peak and better dot formation due to less lattice mismatch between the dot and capping material. Thus, InGaAs based QDIPs would provide better infrared imaging with higher efficiency.