Investigation of the Electrical and Optical Properties of Organometallic Vapor Phase Epitaxial Al/sub X/Ga/sub 1-X/As and Al/sub X/Ga/1-X/As/GaAs. Progress Report, 1 December 1982-1 November 1983

摘要

The focal points of the investigations in the current period have been (a) the understanding of the origin of dominant traps already identified in undoped and doped Al/sub x/Ga/sub 1-x/As; (b) photoluminescence in undoped and doped p- and n-type Al/sub x/Ga/sub 1-x/As and the correlation of luminescence efficiency with trapping; and (c) low and high-field transport properties in these alloys. Measurements have been extended particularly to the indirect bandgap compounds with high Al content, since these materials are used in concentrator solar cells. We believe that a good understanding of the electrical and optical properties of GaAs and Al/sub x/Ga/sub 1/x/As grown by organometallic vapor phase epitaxy (OMVPE) and the correlation of dominant deep levels in these materials with growth conditions have been achieved. (ERA citation 09:013481)