Compositional control and structural properties of ZnSe_(1-x)Te_x epitaxial films on lattice-matched InGaAs/InP (001) by photoassisted Metal Organic Vapor Phase Expitaxy (MOVPE)

摘要

We report the growth of ZnSe_(1-x)Te_x (x < 0.9) epitaxial layers using photoassisted Metal-Organic Vapor Phase Epitaxy (MOVPE) on lattice-matched InGaAs/InP (001) substrates. Ternary compositional control was studied as a function of the gas phase composition, growth temperature (360℃ - 400℃) and irradiation (12 mW/cm~2 - 48mW/cm~2). Compositional and structural data were obtained by x-ray rocking curves from 004 and 044 reflections. Lower growth temperatures increased the relative tellurium incorporation but at the expense of the growth rate.