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Study on high thermal conductivity and thick-thin film hybrid technology of AlN substrate

机译:AlN衬底高导热率与厚膜混合技术研究

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With the trend of miniaturization high power and frequency of electronic devices, the higher performances of cooling, wiring density and lower loss for substrate have been required. Thick Film Circuits and Thin Film Circuits have their limitations on fine wiring and multilayer wiring respectively, which are difficult to simultaneously meet these requirements. In this study, thick-thin film hybrid AlN substrate with properties of high thermal conductivity, multilayer wiring and fine wiring has been researched. The thermal conductivity of AlN substrate has been improved to 190 W/mK by optimizing the preparation and it can content with the cooling requirements effectively. Thick-thin film hybrid technology is induced to meet high density wiring and lower loss. This kind of substrate can be used to High- Power T/R Module, High Speed Optical Transceiver Module and other fields.
机译:随着小型化的趋势,电子设备的高功率和高频率,要求更高的冷却性能,布线密度和更低的基板损耗。厚膜电路和薄膜电路分别在细布线和多层布线上有其局限性,难以同时满足这些要求。在这项研究中,已经研究了具有高导热性,多层布线和精细布线特性的厚膜混合AlN衬底。通过优化制备方法,AlN基片的导热系数已提高到190 W / mK,可以有效满足冷却要求。引入了厚膜混合技术来满足高密度布线和较低损耗的要求。这种基板可用于大功率T / R模块,高速光收发器模块等领域。

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