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Thermal conductivity of polyimide/AlN and polyimide/(AlN plus BN) composite films prepared by in-situ polymerization

机译:通过原位聚合制备的聚酰亚胺/ ALN和聚酰亚胺/(ALN加BN)复合膜的热导率

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摘要

A series of polyimide/AlN composite films and polyimide/AlN/BN composite films with different contents were prepared by using polyimide as organic matrix, AlN and BN as inorganic fillers. The filling of the ALN + BN particles increases the dielectric constant, the breakdown strength, and the thermal conductivity of the film. After filling in 9 vol% AlN content, the thermal conductivity of the polyimide/AlN composite film was 0.675 W/(m center dot K), which was three times that of the pure PI film. The PI/AlN/BN composite film had a thermal conductivity of 0.711 W/(m center dot K) when the content of AlN and BN was 3 vol% and 6 vol%, When the inorganic packing particles are 3%, the tensile strength loss is small and the breakdown strength is increased to 180 kV/mm. The SEM image of PI film showed that when different contents of AlN particles were added to the matrix, whitening phenomenon may occur due to poor interface bonding ability, and the problem was improved after KH560 modification. The result showed that two fillers with different particle sizes formed a close-packing, which was beneficial to increase the number of thermal conduction paths, thereby improving the thermal conductivity. Overall, this paper prepared a series of PI thin films with high thermal conductivity and high insulation.
机译:通过使用聚酰亚胺作为有机基质,AlN和Bn作为无机填料,制备具有不同内容物的一系列聚酰亚胺/ ALN复合膜和聚酰亚胺/ ALN / BN复合膜。 AlN + BN颗粒的填充增加了膜的介电常数,击穿强度和导热率。在填充9Vol%AlN含量之后,聚酰亚胺/ AlN复合膜的导热率为0.675W /(中心点K),这是纯PI膜的三倍。当无机填料颗粒为3%时,Pi / AlN / Bn复合膜的导热率为0.711W /(中心点K)为0.711W /(M中心点K),当无机填料颗粒为3%时,拉伸强度损失很小,击穿强度增加到180 kV / mm。 PI膜的SEM图像表明,当向基质中加入不同含量的AlN颗粒含量时,由于界面粘合能力差,可能发生美白现象,并且在KH560改性后提高了问题。结果表明,两种具有不同颗粒尺寸的填料形成了近填料,这有利于增加热导通路径的数量,从而提高导热率。总的来说,本文制备了一系列具有高导热率和高绝缘材料的PI薄膜。

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