A 40 W AlGaN/GaN MMIC high power amplifier for C-band radar applications

摘要

In this paper, we present a 40 W microwave monolithic integrated circuit high power amplifier using commercial 0.25 mm AlGaN/GaN technology for use in a C-band phased array radar system. This two-stage amplifier, with a chip size of 3.8 mm × 3.9 mm can achieve a saturated output power of 40 W with higher than 35% power added efficiency and 22 dB small signal gain over a frequency range of 5.4 GHz to 6.1 GHz. An output power density of 2.6 W/mm is demonstrated with a compact 14.82 mm chip area.