200W Power amplifier using GaN FET for pulsed radar application

摘要

A 200W class power amplifier for pulsed radar using GaN FETs is provided. A power amplifier according to an embodiment of the present invention includes a distribution circuit for branching an input signal, an amplifying circuit for amplifying the branched input signals using GaN FETs, and a coupling circuit for combining the input signals amplified in the amplifying circuit. Accordingly, it is possible to improve the amplifier efficiency by applying a GaN semiconductor device that is easy to secure high frequency, high output, and high efficiency.