Built-in self test methodology for diagnosis of backend wearout mechanisms in SRAM cells

摘要

In this paper we present a Built-In Self Test (BIST) methodology for diagnosis of backend time-dependent dielectric breakdown (BTDDB), via voiding due to electromigration (EM), and stress-induced voiding (SIV) in SRAM cells. Our built-in self test methodology consists of two test procedures. First, faulty cells suffering from wearout mechanisms in the SRAM system are isolated. Then, these faulty cells are tested to determine the cause of wearout.