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Improvement of Cr dry etching characteristics with MERIE system

机译:利用Merie系统改进Cr干蚀刻特性

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Dry etching characteristics of Cr films were investigaterd and some improvements have been done with magnetically enhanced reactive ion etching (MERIE) system. Cear field patterns and dark field ones exposed on thin EB resists, whose thickness was less than 300nm, were etched. Although there had been some difficulties in etching of clear-field patterns with SAL-601 (Shipley), these situations were much improved with an appropriate etching condition of magneti field. It was found that magnetic field intensity (MFI) affected Cr etching distributions very much. In marked contrast to the above results, MFI condition showed little contributions to the etching distribution of dark field patterns exposed on ZEP-7000 (Nippon Zeon). It was shown that some waveforms of magnetic field could be effective to improve the etchingcharacteristics for the plate whose etching area was extremely small. Etching characteristics for these extremely varied Cr-loaded are considered through the above etching results. Discussions about more useful dry etching process with MERIE system are also described.
机译:Cr薄膜的干蚀刻特性是Investigaterd,并且已经用磁增强的反应离子蚀刻(Merie)系统进行了一些改进。在薄的EB抗蚀剂上暴露在薄抗EB抗蚀剂上,蚀刻厚度小于300nm的触发器场图案和暗场。虽然蚀刻蚀刻透明场图案的难以使用Sal-601(Shipley),但这些情况与磁体场的适当蚀刻条件有很大改善。发现磁场强度(MFI)非常受到CR蚀刻分布。在与上述结果的标志对比中,MFI条件对Zep-7000(Nippon Zeon)暴露的暗场模式的蚀刻分布表示很少的贡献。结果表明,磁场的一些波形可以有效地改善蚀刻区域非常小的板的蚀刻特征。通过上述蚀刻结果考虑了这些极变化的CR负载的蚀刻特性。还描述了关于具有Merie系统的更具有用的干蚀刻过程的讨论。

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