首页> 外国专利> DRY ETCHING CHARACTERISTIC EVALUATING APPARATUS AND DRY ETCHING APPARATUS EQUIPPED WITH THE SAME

DRY ETCHING CHARACTERISTIC EVALUATING APPARATUS AND DRY ETCHING APPARATUS EQUIPPED WITH THE SAME

机译:具有相同功能的干刻特征评估设备和干刻特征设备

摘要

PROBLEM TO BE SOLVED: To measure and display etching speed and uniformity of a film to be etched. ;SOLUTION: A dry etching characteristic evaluating apparatus 11 detects etching end time, based on the light emission strength of plasma light emission wavelength detected by a plasma light emission detecting part 5, and calculates the etching speed and uniformity by an arithmetic part 14 from the etching end time and the film thickness of a film to be etched. The calculated data are displayed on a display part 16 and stored in a storage part 15, and the transition data (trend graph) of the etching speed of each wafer is displayed at the display part 16, as necessary. Also, when data exceeding an abnormal value or management value inputted to an abnormal value setting part 17 are calculated, the etching process is stopped, and the mass generation of manufacture abnormality is prevented.;COPYRIGHT: (C)2000,JPO
机译:要解决的问题:测量并显示蚀刻速度和待蚀刻膜的均匀性。 ;解决方案:干蚀刻特性评估设备11基于由等离子发光检测部件5检测到的等离子发光波长的发光强度来检测蚀刻结束时间,并由运算部件14从该蚀刻速率和均匀性计算出蚀刻速度和均匀度。蚀刻结束时间和被蚀刻膜的膜厚。计算出的数据显示在显示部16上,并存储在存储部15中,根据需要在显示部16上显示各晶片的蚀刻速度的变化数据(趋势图)。另外,当计算出超过异常值或输入到异常值设定部17的管理值的数据时,停止蚀刻处理,防止制造异常的大量产生。(C)2000,JPO

著录项

  • 公开/公告号JP2000286232A

    专利类型

  • 公开/公告日2000-10-13

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19990088659

  • 发明设计人 IWASHITA KOJI;

    申请日1999-03-30

  • 分类号H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-22 02:04:43

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