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Improvement of Cr dry etching characteristics with MERIE system

机译:利用MERIE系统改善Cr干蚀刻特性

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Dry etching characteristics of Cr films were investigaterd and some improvements have been done with magnetically enhanced reactive ion etching (MERIE) system. Cear field patterns and dark field ones exposed on thin EB resists, whose thickness was less than 300nm, were etched. Although there had been some difficulties in etching of clear-field patterns with SAL-601 (Shipley), these situations were much improved with an appropriate etching condition of magneti field. It was found that magnetic field intensity (MFI) affected Cr etching distributions very much. In marked contrast to the above results, MFI condition showed little contributions to the etching distribution of dark field patterns exposed on ZEP-7000 (Nippon Zeon). It was shown that some waveforms of magnetic field could be effective to improve the etchingcharacteristics for the plate whose etching area was extremely small. Etching characteristics for these extremely varied Cr-loaded are considered through the above etching results. Discussions about more useful dry etching process with MERIE system are also described.
机译:研究了铬膜的干法刻蚀特性,并通过磁增强反应离子刻蚀(MERIE)系统进行了一些改进。刻蚀了在厚度小于300nm的薄EB抗蚀剂上曝光的刻蚀场图形和暗场图形。尽管在用SAL-601(希普利公司)刻蚀明场图形时有一些困难,但在适当的磁场刻蚀条件下,这些情况已大大改善。发现磁场强度(MFI)对Cr腐蚀的分布影响很大。与以上结果形成鲜明对比的是,MFI条件对ZEP-7000(Nippon Zeon)上暴露的暗场图案的蚀刻分布几乎没有贡献。结果表明,某些磁场可以有效改善刻蚀面积极小的板的刻蚀特性。通过上述蚀刻结果考虑了这些Cr含量极高变化的蚀刻特性。还介绍了有关使用MERIE系统进行更有用的干法蚀刻工艺的讨论。

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