Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation

摘要

We have developed a two-dimensional noise model based on a Green's function approach. This model allows slow trap density profiles to be determined. The model was applied in the investigation of low-frequency degradation of MOSFETs stressed by hot-carriers, and the generated slow oxide trap density profiles were deduced. For short stress times, the generated traps were localized in the LDD regions, whereas in the case of long stress times, traps were created in both the LDD and the channel regions.