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Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis

机译：用低频噪声分析法测量a-si：H薄膜晶体管体积区域的态密度

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Kyunghwan Lee; Younghwan Son; Jaeho Lee; Jaehong Lee; Seunghyun Jang; Jungjin Park; Shinhyung Kim; Hyungcheol Shin;
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1. Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates [J] . Chan-Yong Jeong, Ick-Joon Park, In-Tak Cho, Japanese journal of applied physics . 2012,第10ISSUE1期

机译：不同氧流量的非晶InGaZnO薄膜晶体管的低频噪声行为及其与亚能级间隙态和偏压诱导不稳定性的关系研究
2. Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors [J] . Kim S., Jeon Y., Lee J.-H., Electron Device Letters, IEEE . 2010,第11期

机译：非晶InGaZnO薄膜晶体管的低频噪声与状态的亚隙密度之间的关系
3. Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method [J] . Jeong Chan-Yong, Kim Jong In, Lee Jong-Ho, Electron Device Letters, IEEE . 2015,第12期

机译：反向沟道刻蚀法制备双栅非晶InGaZnO薄膜晶体管的低频噪声特性
4. Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis [C] . Kyunghwan Lee, Younghwan Son, Jaeho Lee, International Conference on Applied Materials and Electronics Engineering . 2012

机译：使用低频噪声分析，A-Si：H薄膜晶体管散装频道区域中的状态提取密度
5. Low-frequency bulk and surface generation-recombination noise simulations of semiconductor devices. [D] . Hou, Fan-Chi (Frank). 2002

机译：半导体器件的低频体和表面产生-复合噪声仿真。
6. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors [O] . Weifeng Chen, Weijing Wu, Lei Zhou, 2018

机译：金属氧化物薄膜晶体管的界面和态体积密度的半分析萃取方法
7. A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor [O] . Che CM, Lai PT, Leung CH, 2013

机译：一种用于并五苯有机薄膜晶体管的载流子产生 - 复合工艺的低频噪声模型

Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis

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