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Extraction of channel impurity concentration profiles in submicron MOS transistors from lineshape of recombination current at interface traps

机译：从界面陷阱处复合电流的线形中提取亚微米MOS晶体管中的沟道杂质浓度分布

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作者
Wang, Yih;
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作者单位

University of Florida;

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授予单位 University of Florida;
学科
学位 Ph.D.
年度 2000
页码 142 p.
总页数 142
原文格式 PDF
正文语种 eng
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1. High Concentration Effects Of Neutral-potential-well Interface Traps On Recombination Dc Current-voltage Lineshape In Metal-oxide-silicon Transistors [J] . Zuhui Chen, Bin B Jie, Chin-Tang Sah Journal of Applied Physics . 2008,第9期

机译：中性势阱界面陷阱对金属氧化物硅晶体管中复合直流电流线形的高浓度影响
2. Profiling interface traps in MOS transistors by the DC current-voltage method [J] . Chih-Tang Sah, Neugroschel A. IEEE Electron Device Letters . 1996,第2期

机译：通过直流电流-电压方法分析MOS晶体管中的接口陷阱
3. Tunnel DCIV Extraction of Dopant-Impurity Concentration, Oxide Thickness, and Length in the Channel and Extension Regions of Ultrathin Gate-Oxide MOS Transistors [J] . Bin B. Jie, Chih-Tang San IEEE Transactions on Electron Devices . 2005,第7期

机译：隧道DCIV提取超薄栅氧化物MOS晶体管的沟道和扩展区中的杂质-杂质浓度，氧化物厚度和长度
4. Generation-Recombination-Trapping at Interface Traps In Short-Channel MOS Transistors [C] . Bin B. Jie, Chih-Tang Sah International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN) . 2006

机译：短沟道MOS晶体管中的界面陷阱处的生成-复合陷阱
5. Theory and experiments of electron-hole recombination at silicon/silicon dioxide interface traps and tunneling in thin oxide MOS transistors. [D] . Cai, Jin. 2000

机译：硅/二氧化硅界面陷阱处的电子-空穴复合以及薄氧化物MOS晶体管中的隧穿的理论和实验。
6. Metal oxide-graphene field-effect transistor: interface trap density extraction model [O] . Faraz Najam, Kah Cheong Lau, Cheng Siong Lim, 2016

机译：金属氧化物-石墨烯场效应晶体管：界面陷阱密度提取模型
7. Assessment of hot-hole-induced interface states and trapped carriers in submicron n (metal-oxide semiconductor field effect transistors) by gate-to-drain capacitance measurement [O] . Ghodsi, R., Yeow, Y. T., Alam, M. K. 1994

机译：通过栅漏电容测量评估亚微米n（金属氧化物半导体场效应晶体管）中热孔诱导的界面态和俘获的载流子
8. Implications of the Trapping-Desorption and Direct Inelastic Scattering Channels on Dicke-Narrowed Lineshapes [R] . Frueholz, R. P., Camparo, J. C. 1988

机译：俘获 - 解吸和直接非弹性散射通道对Dicke - 窄线形的影响

Extraction of channel impurity concentration profiles in submicron MOS transistors from lineshape of recombination current at interface traps

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