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Crystallization of sputtered Si film by blue laser diode annealing (BLDA) for photo-sensor application

机译：通过蓝激光二极管退火（BLDA）使溅射的Si膜结晶化，用于光电传感器

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Results of various spectroscopic methods showed the thick sputtered-Si films entirely crystallized with preferred orientation as (111) after BLDA. Superficial layer turns into lateral grains while underlying layer grows into columnar grains. Photo-electrical characteristics show BLDA is promising for fabrication of advanced poly-Si photo-sensor and for thin film photovoltaic cells.

机译：各种光谱方法的结果表明，在BLDA之后，厚的溅射Si膜完全结晶，具有优选的取向为（111）。表层变成横向晶粒，而下层变成圆柱状晶粒。光电特性表明，BLDA在制造先进的多晶硅光电传感器和薄膜光伏电池方面很有前途。

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《IDW '10;International display workshops》|2011年|p.689-692|共4页
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Jean de Dieu Mugiraneza; Katsuya Shirai; Toshiharu Suzuki; Tatsuya Okada; Takashi Noguchi; Hideki Matsushima; Takao Hashimoto; Yoshiaki Ogino; Eiji Sahota;
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1. Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing [J] . Katsuya Shirai, Jean de Dieu Mugiraneza, Toshiharu Suzuki, Japanese journal of applied physics.Part 1.Regular papers & short notes . 2011,第2期

机译：蓝多激光二极管退火溅射非晶硅膜的结晶行为
2. Crystallization of a-Si films with smooth surfaces by using Blue Multi-Laser Diode Annealing [J] . Okada Tatsuya, Sugihara Kouya, Chinen Satoshi, Journal of the Korean Physical Society . 2015,第8期

机译：蓝光多晶二极管退火技术使表面光滑的非晶硅薄膜结晶
3. Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA) [J] . Kouya Sugihara, Kiyoharu Shimoda, Tatsuya Okada, Journal of information display . 2017,第4期

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4. Crystallization of sputtered Si film by blue laser diode annealing (BLDA) for photo-sensor application [C] . Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, International display workshops . 2010

机译：用光传感器应用的蓝色激光二极管退火（BLDA）结晶溅射Si膜
5. Pulsed laser annealing of silicon thin films in application to thin film transistors. [D] . Moon, Seung-Jae. 2001

机译：应用于薄膜晶体管的硅薄膜的脉冲激光退火。
6. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing [O] . Emi Machida, Masahiro Horita, Yasuaki Ishikawa, -1

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8. Excimer Laser Crystallization of Silicon Films: Artificially-Controlled Super Lateral Growth for Grain Boundary Location-Controlled and Single Crystal Island Materials for Thin Film Transistor Applications [R] . Im, J. S. , Sposili, R. S. 1998

机译：硅薄膜准分子激光晶化：用于薄膜晶体管应用的晶界限位和单晶岛材料的人工控制超横向生长

Crystallization of sputtered Si film by blue laser diode annealing (BLDA) for photo-sensor application

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