LASER ANNEALING APPARATUS AND METHOD OF CRYSTALLIZING THIN FILM USING LASER ANNEALING APPARATUS

摘要

The laser annealing apparatus includes a stage that supports a substrate on which a thin film to be processed is formed, moves along a first direction at a preset speed, a laser generator that irradiates a laser beam to a first area of the thin film while the stage is moving. A reflective member configured to reflect a part of the laser beam reflected from the first region of the thin film to the second region of the thin film to be treated may be included, and the first region and the second region may be spaced apart from each other. Accordingly, the amorphous silicon layer can be changed to a polysilicon layer without film bursting defect.