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LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND CRYSTALLIZED SILICON FILM SUBSTRATE
LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND CRYSTALLIZED SILICON FILM SUBSTRATE
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机译:激光退火方法,激光退火装置和结晶硅膜基材
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摘要
A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.
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