Laser annealing method, laser annealing apparatus and crystallized silicon film substrate

摘要

First laser beam irradiation for changing the amorphous silicon film into a microcrystalline silicon film by irradiating the first laser beam, and moving the second laser beam along the predetermined direction using the microcrystalline silicon film as a starting point, A second laser beam irradiation for crystal growth of the crystalline silicon film is performed in the transverse direction, and a microcrystalline silicon film and a crystalline silicon film are alternately formed along a predetermined direction with respect to the substrate surface.