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Design, packaging and reliability aspects of RF MEMS circuits fabricated using a GaAs MMIC foundry process technology

机译:使用GaAs MMIC铸造工艺技术制造的RF MEMS电路的设计,封装和可靠性方面

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In this paper, we report on recent results obtained within a pan-European research effort aiming at a successful integration of RF MEMS switches in a GaAs MMIC foundry process technology. Testing and characterization of GaAs based MEMS switches and RF circuits show promising results with respect to switch cycling tests, micro-seconds switching times and the relatively low losses demonstrated up to millimetre-wave frequencies. Compact GaAs RF MEMS based phase shifters together with a possible packaging solution are also presented.
机译:在本文中,我们报告了在一项旨在将RF MEMS开关成功集成到GaAs MMIC铸造工艺技术中的泛欧洲研究工作中获得的最新结果。基于GaAs的MEMS开关和RF电路的测试和表征在开关循环测试,微秒级开关时间和高达毫米波频率的相对较低损耗方面显示出令人鼓舞的结果。还介绍了基于紧凑型GaAs RF MEMS的移相器以及可能的封装解决方案。

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