目的：评估新研GaAs微波单片集成电路（MMIC）功率放大器的可靠性指标。方法用图估法和范-蒙特福特检验法对失效数据进行分布假设检验，利用贝叶斯定理估算低温度应力下无失效数据的威布尔分布参数。结果在正常工作情况下，结温为150℃时，该器件特征寿命为833370 h，10年平均失效率为1.2472×10-7/h，平均寿命为738540 h，可靠度等于0.9时的可靠寿命为31年。结论该型器件在结温小于250℃时服从威布尔分布，结温为270℃时器件的失效机理已发生了变化，器件的各项可靠性指标满足使用要求。%Objective Constant temperature stress accelerated life test was used to evaluate the reliability index of GaAs microwave monolithic integrated circuit (MMIC) power amplifier. Methods The failure time distribution of the device was detected by using the probability paper and Van-Montfort methods,and Bayes principle was used to estimate Weibull distribution parameters at the lowest temperature level without failure data. Results A series of calculating results were achieved under normal working condition(θj=150℃):the characteristic life was 833 370 h,the mean failure rate for 10 years was 1.2472 × 10-7 h,the mean life was 738 540 h and the reliable life was 31 years with a reliability of 0.9. Conclusion The reliability index of this device was well enough to meet our needs,and the lifetime of the device obeyed Weibull Distribution below 250℃,but the failure mechanism changed when the junction temperature was above 270℃.
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