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Warpage improvement for large die flip chip package

机译:大芯片倒装芯片封装的翘曲改善

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In the case of field programmable gate array (FPGA) chips, as the demand for higher speeds and enhanced functionality increases, the size of the flip chip die grows accordingly to offer higher number of logic cells. Large flip chip die also requires a large package for efficient signal routing. This paper shows a warpage improvement study including lid design and process optimization to solve warpage issue of large die FPGA flip chip packages with more fragile bump (23 * 23 mm die and 42.5 * 42.5 mm package). Though package warpage is well controlled for standard eutectic bump BOM (bill of materials) and process, it encountered problem when using higher Tg underfill, which is for better bump protection and reliability. A detailed finite element analysis was performed to simulate the effect of different lid structures (foot width, thickness etc) and lid materials (Cu, Al etc) on warpage. Actual units were built using improved lid structures and process. It was found that thicker Cu lid and lower underfill cure temperature are effective ways for warpage control, less than 8 mils warpage was achieved by lid design and process optimization for this 42.5 mm package with 23 mm die with more fragile bump.
机译:在现场可编程门阵列(FPGA)芯片的情况下,随着对更高速度和增强功能的需求增加,倒装芯片的尺寸也相应增加,以提供更多数量的逻辑单元。大型倒装芯片管芯还需要大型封装,以实现有效的信号路由。本文显示了包括盖设计和工艺优化在内的翘曲改进研究,以解决凸点更脆弱的大裸片FPGA倒装芯片封装(23 * 23 mm裸片和42.5 * 42.5 mm封装)的翘曲问题。尽管对于标准的共晶凸块BOM(材料清单)和工艺来说,封装翘曲得到了很好的控制,但在使用较高Tg底部填充时却遇到了问题,这是为了获得更好的凸块保护和可靠性。进行了详细的有限元分析,以模拟不同盖子结构(脚的宽度,厚度等)和盖子材料(Cu,Al等)对翘曲的影响。使用改进的盖子结构和工艺建造实际单元。结果发现,较厚的铜盖和较低的底部填充固化温度是控制翘曲的有效方法,对于采用23 mm裸片且凸点更脆弱的42.5 mm封装,通过盖设计和工艺优化,翘曲变形小于8密耳。

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