Strain Effect On AlAs/InGaAs/InAs RTD Growth and Electrical Characteristics

摘要

We have directly linked the interface roughness and electrical characteristics for pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs). For strained InAs growth at low growth rate (～ 0.01 nm/s), enhanced surface roughening has been observed by in situ laser light scattering and ex situ transmission electron microscopy (TEM); these data are consistent with Monte Carlo simulations, which indicate increased surface islanding at lower growth rates and higher temperatures in strained systems. The RTD current-voltage curves are also sensitive to the interface roughness with peak-to-valley ratio sharply decreasing at lower growth rates.