METHOD FOR TWO DIMENSIONAL EPITAXIAL GROWTH OF HEAVILY LATTICED MISMATCHED INGAAS AND INA/AS ON GAAS

摘要

The present invention relates to a method of growing an InGaAs or InAlAs thin film (4) having a large lattice mismatch on a GaAs substrate (1) using MOCVD at a minimum dislocation density. After injecting only Group III raw material gas for a few seconds, and injecting Group V raw material gas to grow a binary thin film 3 having a thickness of less than 2 mm, and separately injecting AsH ₃ gas containing a Group V element, the binary thin film The heterogeneous interface between (3) and the InGaAs or InAlAs thin film 4 grown thereon is kept sharp.;As a result, misfit dislocations due to lattice mismatch can be minimized, and a surface of a thin film without a cross hatch pattern can be obtained.