Selective molecular beam epitaxy for multifunction microwave integrated circuits

摘要

We report here the use of selective molecular beam epitaxy to produce microwave circuits that monolithically integrate multiple device technologies on the same chip. We have recently achieved several unique multifunction technology mixes using selective MBE. These include npn-pnp complementary HBT circuits such as push-pull amplifiers, and monolithic microwave HEMT-HBT integrated circuits such as 5-10 GHz HBT-regulated HEMT low-noise amplifiers.