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Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

机译：分子束外延集成电路兼容温度的蒸汽固体 - 固体生长GE纳米线

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Zhongyunshen Zhu; Yuxin Song; Zhenpu Zhang; Hao Sun; Yi Han; Yaoyao Li; Liyao Zhang; Zhongying Xue; Zengfeng Di; Shumin Wang;
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1. Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy [J] . Zhu Zhongyunshen, Song Yuxin, Zhang Zhenpu, Journal of Applied Physics . 2017,第9期

机译：分子束外延法在集成电路兼容温度下汽-固-固生长的Ge纳米线
2. Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy [J] . Zhu Zhongyunshen, Song Yuxin, Zhang Zhenpu, Journal of Geophysical Research. Biogeosciences . 2017,第9期

机译：分子束外延集成电路兼容温度的蒸汽固体 - 固体生长GE纳米线
3. Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates [J] . Hoke WE, Leoni RE, Whelan CS, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第3期

机译：GaAs衬底上分子束外延生长的变质光电集成电路的材料性能和性能
4. The Fabrication of p-Ge/n-Si Photodetectors, Compatible With Back-End Si CMOS Processing, by Low Temperature (< 400 °C) Molecular Beam Epitaxy and Electron-Beam Evaporation [C] . Prabhakar Bandaru, Subal Sahni, Eli Yablonovitch, Materials Research Society Symposium . 2004

机译：通过低温（<400℃）分子束外延和电子束蒸发，与后端Si CMOS加工相容的P-Ge / N-Si光电探测器的制备。
5. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes [D] . May, Brelon J. 2019

机译：分子束外延生长的III族氮化物纳米线紫外发光二极管的均相和电流注入研究与工程
6. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy [O] . Kwang Wook Park, Chang Young Park, Sooraj Ravindran, 2014

机译：通过分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性
7. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy [O] . 2014

机译：分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性
8. Integrated Optoelectronic Circuits Utilizing InGaAsP Grown by Molecular Beam Epitaxy (Erbium Doping of MBE GaAs) [R] . Meeks, E. L. 1987

机译：利用分子束外延生长InGaasp的集成光电子电路（mBE Gaas的掺铒）

Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

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