Evaluation of CMOS/SOI Devices on Plasma-Thinned Bonded Silicon Wafers

摘要

A new type of precision thinned bonded silicon wafer is evaluated for thin film CMOS/SOI applications. SOI wafers with silicon film thickness variations of less than ±2.5 nm are available with choice of substrate doping and buried oxide thickness. CMOS devices fabricated on these wafers have the same carrier mobilities as comparable bulk silicon MOSFETs.