Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures

摘要

Dislocation configurations in as-grown and annealed Si/Si_(0.88)Ge_(0.12)/(001)Si heterostructures were analysed. For both cases, dislocations were observed in the Si substrate and Si cap, while no or few dislocations were found in the SiGe layer. LACBED measurements indicated some dislocations parallel to the interface but deep in the substrate to have the opposite Burgers vectors to those required to relieve misfit strain at the interface.