Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure

摘要

A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2×10.sup.-4 Torr, heating the substrate to a temperature of at least 280° C., and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate.