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Polycrystalline CdZnTe Thick Films for Low Energy X-ray: System Evaluation

机译:低能X射线多晶CdZnTe厚膜:系统评估

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The X-ray response of polycrystalline-CdZnTe was measured by signal-to-noise (S/N) analysis. The CdZnTe material has optimal properties in a solid-state X-ray detector, and much research has focused on single crystal CdZnTe with a small-sized, silicon readout device. However, it would be difficult to apply CdTe or CdZnTe single crystal to large area, flat panel detectors, such as those used for radiography and mammography. As an alternative of single crystal CdZnTe, we have grown thick, polycrystalline CdZnTe films of high resistivity (5times109 Ohm cm) using the thermal evaporation method on carbon substrate. A high signal-to-noise value has a direct impact on the performance of CdZnTe X-ray detectors. Important image parameters, such as dynamic range and detective quantum efficiency, rely on the signal and noise characteristics of the system. In this paper, we analyzed the properties of the X-ray detector and obtained images of the X-ray detector using the data acquisition system. The X-ray detector used the Cd1-xZnxTe (x=0.04), which used carbon substrate and gold as the electrode. The detector design is planar and 32 mmtimes10 mm in size, and it has a 1.75mmtimes1mm pixel electrode size and a detector thickness of 150 mum
机译:通过信噪比(S / N)分析测量了多晶CdZnTe的X射线响应。 CdZnTe材料在固态X射线检测器中具有最佳性能,并且许多研究都集中在具有小型硅读出装置的单晶CdZnTe上。但是,很难将CdTe或C​​dZnTe单晶应用于大面积的平板探测器,例如用于射线照相和乳房X线照相的探测器。作为单晶CdZnTe的替代品,我们使用热蒸发法在碳衬底上生长了高电阻率(> 5×10 9 Ohm cm)的厚多晶CdZnTe薄膜。高信噪比直接影响CdZnTe X射线探测器的性能。重要的图像参数,例如动态范围和探测量子效率,取决于系统的信号和噪声特性。在本文中,我们分析了X射线探测器的特性,并使用数据采集系统获得了X射线探测器的图像。 X射线检测器使用Cd 1-x ZnxTe(x = 0.04),该电极使用碳基质和金作为电极。该探测器设计为平面,尺寸为32毫米x 10毫米,像素电极尺寸为1.75毫米x 1毫米,探测器厚度为150微米

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