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A comparison of three X-ray emission techniques with applications to thin film and bulk samples including low energy heavy-ion particle-induced X-ray emission spectroscopy.

机译:比较了三种X射线发射技术及其在薄膜和块状样品上的应用,包括低能重离子粒子诱导的X射线发射光谱。

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The three techniques of Particle Induced X-ray Emission (PIXE), X-ray Fluorescence (XRF) and Scanning Electron Microscopy-Energy Dispersive Spectroscopy (SEM-EDS) are described. The equipment used for each is described in some detail, and some of the advantages and disadvantages of each technique are discussed. Vacancy lifetimes and fluorescence yield are discussed. A system to perform PIXE analyses in a Nanofab focused ion beam is discussed. Calculations are then described which compare the three techniques for depth of analysis. Calculations are shown which give an idea of the ionization and x-ray production cross-sections of these three techniques. Two methods of calculating the energy for maximum K-shell ionization cross-section for incident electrons and protons result in two charts of such values. The cross-sections of the three techniques are compared. The change in peak height with change in Z of the sample material is explored for X-ray fluorescence in thin films.; In part 2, a computer program known as Inner Shell Ionization Cross Sections (ISICS) which uses the Energy loss Coulomb Perturbed Stationary State Relativistic theory with United Atom correction (ECPSSR-UA) model is used to generate theoretical data on cross sections. The cross section data from this program is then verified by checking against experimental data to ascertain whether ISICS is an accurate or conservative program for predicting x-ray production cross sections. This program is then used to generate predictions for PIXE in the Focused Ion Beam (FIB-PIXE) for three incident ions at 280 keV for selected x-ray lines. It is concluded that a lithium ion source is by far the best way to attempt FIB-PIXE.
机译:描述了粒子诱导X射线发射(PIXE),X射线荧光(XRF)和扫描电子显微镜-能量色散光谱(SEM-EDS)的三种技术。详细介绍了每种设备所使用的设备,并讨论了每种技术的一些优缺点。讨论了空位寿命和荧光产量。讨论了在Nanofab聚焦离子束中执行PIXE分析的系统。然后介绍计算方法,将三种技术的分析深度进行比较。显示的计算给出了这三种技术的电离和X射线产生截面的概念。计算入射电子和质子最大 K 壳电离截面能量的两种方法产生了两个这样的值图表。比较了这三种技术的横截面。研究了样品材料的峰高随Z值的变化,以研究薄膜中的X射线荧光。在第2部分中,使用了一个称为内壳电离截面(ISICS)的计算机程序,该程序使用带有联合原子校正的能量损耗库仑摄动平稳状态相对论(ECPSSR-UA)模型来生成截面的理论数据。然后,通过对照实验数据来验证该程序的横截面数据,以确定ISICS是用于预测X射线产生横截面的准确程序还是保守程序。然后,该程序用于为选定的X射线线针对280 keV处的三个入射离子生成聚焦离子束(FIB-PIXE)中PIXE的预测。结论是,到目前为止,锂离子源是尝试FIB-PIXE的最佳方法。

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