A comprehensive trapped charge profiling technique for SONOS flash EEPROMs

摘要

Trapped charge profiles under CHE program of SONOS flash cells are uniquely determined and verified using I-V, GIDL and CP measurements and Monte Carlo simulations. The prospect of profiling using I-V measurement alone is discussed. The inaccuracy associated with conventional CP technique is discussed. The correct method of CP simulation for programmed SONOS devices is shown and programming induced interface-trap generation is estimated.