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METHOD FOR ELIMINATING OF CYCLING-INDUCED ELECTRON TRAPPING IN THE TUNNELING OXIDE OF 5 VOLT ONLY FLASH EEPROMS
METHOD FOR ELIMINATING OF CYCLING-INDUCED ELECTRON TRAPPING IN THE TUNNELING OXIDE OF 5 VOLT ONLY FLASH EEPROMS
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机译:消除5伏闪存EEPROM隧道氧化中循环感应电子陷阱的方法
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摘要
There is provided an improved method for eliminating of cycling-induced electron trapping in the tunneling oxide of flash EEPROM devices. A relatively low positive pulse voltage is applied to a source region of the EEPROM devices during an entire erase cycle. Simultaneously, a negative ramp voltage is applied to a control gate of the EEPROM devices during the entire erase cycle so as to accomplish an averaging tunneling field from the beginning of the erase cycle to the end of the erase cycle.
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