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Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM
Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM
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机译:削波正弦波通道擦除方法以降低闪存EEPROM的氧化物俘获电荷产生率
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摘要
A method to channel erase data from a flash EEPROM while electrical charges trapped in the tunneling oxide of a flash EEPROM are eliminated to maintain proper separation of the programmed threshold voltage and the erased threshold voltage after extended programming and erasing cycles. The method to channel erase a flash EEPROM cell begins by removing the charge from the floating gate of the flash EEPROM cell. The channel erasing consists of applying a relatively large clipped sinusoidal negative voltage pulse to the control gate of said EEPROM cell and concurrently applying a moderately large positive voltage pulse to a first diffusion region. At the same time a ground reference potential is applied to the semiconductor substrate, while the drain, the source and a second diffusion well are allowed to float.
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