Interface disorder of In incorporated AlGaAs/GaAs quantum well grown by molecular beam epitaxy

摘要

The interface quality plays an important role in novel heterostructure devices such as quantum well lasers and high electron mobility transistors (HEMTs). The AlGaAs/GaAs heterointerface has been extensively investigated by photoluminescence (PL), Photoluminescence excitation spectroscopy (PLE), and transmission electron microscope (TEM) using the interruption and high growth temperature techniques. In this letter, we compare the effect of interface roughness on In incorporated AlGaAs/GaAs quantum wells (QWs) with non In incorporated AlGaAs/GaAs QWs with and without interruption by PL spectra. The schematic structures of the samples grown at 610/spl deg/C are shown. All the excitonic recombination peaks from 77 K related to SQW's are single peaks, which indicate that the lateral size of growth island is not so large as the exciton diameter (/spl sim/150 /spl Aring/).