Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

摘要

Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III-V materials on silicon.