Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

摘要

Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structures exhibit less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep sub-/spl mu/m MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.