Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

摘要

Hot-carrier reliability for devices operating in radiation environment must be considered. In this paper, we investigate how total ionizing dose impacts the hot-carrier reliability of partially-depleted SOI I/O NMOSFET5, highlighting the effect of buried oxide. Firstly, radiation-induced damage on short channel SOI devices with 100 nm thick Si film was investigated. After low total dose irradiation, incomplete fully-depleted state has been formed due to the non-uniformly distributed positive charges in the buried oxide. Furthermore, as the dominated factor of hot-carrier injection, the body current reduces after irradiation. Subsequently, the irradiated SOI devices were subjected to hot-carrier stress for 9000-s long time. Compared with unirradiated devices, the irradiated samples display enhanced hot-carrier degradation. We attribute this phenomenon to that radiation lowers the barrier for hot-carrier injection. Therefore, in order to ensure the reliability of SOI devices operating in harsh radiation environments, SOI devices with higher quality or corresponding hardness design should be taken. (C) 2017 Elsevier Ltd. All rights reserved.