Thermal stability of thin CoSi/sub 2/ layers on polysilicon implanted with As, BF/sub 2/ and Si

摘要

In this paper we studied the influence of the dopant and of the polysilicon substrate on the thermal stability of a thin CoSi/sub 2/ layer. To distinguish between the influence of the dopant (As or B) and the effect of the implant in the silicon substrate, also an implantation of silicon was performed on a different sample. A large difference in the silicide thermal stability has been observed and this behavior has been explained with the crystallographic orientation of the underlying silicon substrate and of the silicide layer.