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Thermal stability of thin CoSi/sub 2/ layers on polysilicon implanted with As, BF/sub 2/ and Si

机译：植入为AS，BF / SUB 2 /和SI的多晶硅薄Cosi / sub 2 /层的热稳定性

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《European Workshop on Materials for Advanced Metallization》|1998年||共3页
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La Via F.; Alberti A.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. CoSi_x thermal stability on narrow-width polysilicon resistors [J] . Yen-Ming Chen, George C. Tu, Ying-Lang Wang, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第1期

机译：CoSi_x在窄宽度多晶硅电阻上的热稳定性
2. Reverse CoSi_2 Thermal Stability and Digitized Sheet Resistance Increase of Sub-90 nm Polysilicon Lines [J] . Cheng-Yao Lo, Yuan-Ching PENG, Yen-Ming CHEN, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：低于90 nm多晶硅线的反向CoSi_2热稳定性和数字化薄层电阻增加
3. A novel process to form cobalt silicided p/sup +/ poly-Si gates by BF/sub 2//sup +/ implantation into bilayered CoSi/a-Si films and subsequent anneal [J] . Lai W.K., Liu H.W. IEEE Electron Device Letters . 1998,第7期

机译：通过将BF / sub 2 // sup + /注入双层CoSi / a-Si膜并随后进行退火来形成硅化钴p / sup + /多晶硅栅极的新工艺
4. Thermal stability of thin CoSi/sub 2/ layers on polysilicon implanted with As, BF/sub 2/ and Si [C] . La Via F., Alberti A., Institute of Electric and Electronic Engineer European Workshop on Materials for Advanced Metallization . 1998

机译：植入为AS，BF / SUB 2 /和SI的多晶硅薄Cosi / sub 2 /层的热稳定性
5. The structure, optical behavior, and thermal stability of sputter-deposited hafnium dioxide single layer and hafnium dioxide-aluminum oxide nanolaminate thin-films. [D] . Hoppe, Elizabeth Ellen. 2009

机译：溅射沉积的二氧化f单层和二氧化ha-氧化铝纳米层压薄膜的结构，光学性能和热稳定性。
6. Phase Formation and High-Temperature Stability of Very Thin Co-Sputtered Ti-Al and Multilayered Ti/Al Films on Thermally Oxidized Si Substrates [O] . Marietta Seifert, Eric Lattner, Siegfried B. Menzel, 2020

机译：热氧化硅衬底上非常薄的共溅射Ti-Al和多层Ti / Al膜的相形成和高温稳定性
7. Growth Behavior and Thermal Stability of CoSi2Layer on Poly-Si Substrate Using Reactive Chemical Vapor Deposition [O] . 2003

机译：反应化学气相沉积的Cosi2镶嵌对Cosi2晶体的生长行为及热稳定性
8. Origins of Structural Defects in BF sub 2+ -Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-Free Regrowth [R] . Sands, T., Washburn, J., Myers, E., 1984

机译：BF sub 2+ - 嵌入和快速热退火硅结构缺陷的起源：无缺陷再生的条件

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