首页> 外国专利> Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor

Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor

机译:多晶硅层,制备多晶硅层的方法,使用该多晶硅层的薄膜晶体管以及包括该薄膜晶体管的有机发光显示装置

摘要

A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
机译:结晶硅层的方法。在衬底上的缓冲层上形成非晶硅层。催化剂金属层形成在非晶硅层上,具有大约10 11 到大约10 15 atom / cm 2 的密度。当催化剂金属层的催化剂金属扩散到非晶硅层中时,具有金字塔形状的晶种形成在非晶硅层和缓冲层之间的界面上。对非晶硅层进行热处理,使得随着硅晶通过晶种生长而形成多晶硅层。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号