Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

摘要

This paper describes the characterization of transient floating body effect in non-fully depleted SOI MOSFETs. The front gate coupling factor (P/sub fgc/) is used as a measure of the "floating body stability". A simple and yet accurate technique is proposed to measure P/sub fgc/. From measurement, impact of scaling channel length on P/sub fgc/ is investigated. The measurement result agrees with simple analytical model. In sub-0.2 /spl mu/m devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling.