Switching loss analysis of shorted drain non punch-through and punch-through type IGBTs in voltage resonant circuit

摘要

The dissipated turn-off losses of shorted drain non-punch-through and punch-through type IGBTs (insulated-gate bipolar transistors) are investigated for voltage resonant circuit application. These characteristics are analyzed experimentally and calculated by using a two-dimensional device simulator. It is shown that the shorted drain structure is not effective for decreasing the dissipated loss, whereas the optimized punch-through type IGBT is suitable for this circuit application.