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Analysis of defect structures in single crystals by ion scattering and channelling

机译：通过离子散射和沟道分析单晶中的缺陷结构

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The defect structures such as surface atomic steps and point defects have been studied by computer simulation of ion scattering and channelling processes. The energy and angular distributions of ions scattered and dechannelled from semi-infinite and isola

机译：通过离子散射和沟道过程的计算机模拟研究了诸如表面原子台阶和点缺陷之类的缺陷结构。从半无限和伊索拉散射和去通道的离子的能量和角度分布

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《Internet, 2007 Third IEEE/IFIP International Conference in Central Asia on 》|2007年|P.1-5|共5页
会议地点 TashkentUzbekistan
作者
Rasulov; A.;
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III-V semiconductors; channelling; copper; crystal structure; gallium compounds; ion-surface impact; point defects; vacancies (crystal); wide band gap semiconductors; Cu; GaN; channelling processes; defect structures; low-energy ion scattering; point defects; radiation;

机译：III-V半导体；窜铜;晶体结构镓化合物离子表面冲击；点缺陷空缺（晶体）；宽带隙半导体；铜氮化镓;引导过程；缺陷结构；低能离子散射；点缺陷辐射;

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4. Analysis of defect structures in single crystals by ion scattering and channelling [C] . Rasulov A. IEEE/IFIP International Conference in Central Asia on Internet . 2007

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Analysis of defect structures in single crystals by ion scattering and channelling

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